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Abstract We report on the structure and dielectric properties of ternary A₆B₂O₁₇(A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase‐homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500°C. Crystal structure, microstructure, chemistry, and dielectric properties are characterized by X‐ray diffraction and reflectivity, atomic force microscopy, X‐ray photoelectron spectroscopy, and capacitance analysis, respectively. We observe relative permittivities approaching 60 and loss tangents <1 × 10⁻²across the 10³–10⁵ Hz frequency range in the Zr₆Nb₂O₁₇and Zr₆Ta₂O₁₇phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics. 

Anomalously abrupt nucleation and growth kinetics in polarization switching of wurtzite ferroelectrics are demonstrated. The anomaly inspires an extension of the traditional model to a regime that simultaneous non-linear nucleation and growth occur. 

Abstract Wurtzite ferroelectric materials are promising candidates for energy‐efficient memory technologies, particularly for applications requiring high operating temperatures. Asymmetric wake‐up behaviors, in which the polarization reversal depends both on polarity and cycle number for the first few dozen cycles, must be better understood for reliable device operation. Here, the detailed analysis of the asymmetric wake‐up behavior of thin film Al_0.94B_0.06N was performed combining time‐resolved switching measurements with Rayleigh analysis, piezoelectric measurements, and etching experiments of progressively switched samples. The analysis shows that the gradual opening of the polarization hysteresis loops associated with wake‐up is driven by a gradual increase in the domain‐wall density and/or domain‐wall mobility with electric field cycle to the polarity opposite to the growth polarity. The insights of this discovery will help to guide interface and polarity design in the eventual deployment of reliable devices based on these materials.